Title:
VAPOR GROWTH METHOD
Document Type and Number:
Japanese Patent JPS61141118
Kind Code:
A
Abstract:
PURPOSE:To deposit the epitaxial growth film almost without autodoping by providing the step for depositing a thin polycrystalline or amorphous silicon film on a single crystal silicon substrate and the step for making said polycrystalline or amorphous silicon film into single crystal by annealing. CONSTITUTION:A base plate 2 is provided with a gas supply entrance 3 for supplying a reaction gas and a gas exhaust vent 4 for exhausting the reaction gas. For the epitaxial growth, a natural oxide film is removed by a hydrofluoric water solution and further a mixed gas of monosilane and hydrogen is supplied on the semiconductor substrate 5 having a buried layer which is cleaned by pure water and dried to deposit an amorphous film of 0.4mum on the semiconductor substrate 5 at the temperature about 550 deg.C. Then the substrate 5 is heated to the temperature about 1,100 deg.C followed by H2 annealing for about 10min thereby making the amorphous film into single crystal. The temperature is lowered to about 1,000 deg.C again and a doping gas such as of monosilane and phosphine is mixed into the supplied hydrogen gas to deposit an epitaxial growth film.
Inventors:
SUZUKI NAOKI
NOZAKI JUNICHI
NOZAKI JUNICHI
Application Number:
JP26387184A
Publication Date:
June 28, 1986
Filing Date:
December 14, 1984
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/20; H01L21/205; H01L21/263; (IPC1-7): H01L21/263
Attorney, Agent or Firm:
Isao Abe