Title:
VAPOR PHASE EPITAXY METHOD OF COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3915750
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enable the steep doping of Mg in a vapor phase epitaxy method of a compound semiconductor wherein Cp2Mg is used as a doping material for an AlGaInP-based compound semiconductor.
SOLUTION: Prior to the growing of a semiconductor layer to preferably add Mg, gas containing only CP2Mg steam is made to flow inside a pipe heated to not lower than 40°C nor higher than 80°C within a range satisfying 0.05≤W/S≤1, where S (square centimeter) is a surface area inside the pipe wherein hydrogen gas or nitrogen gas containing only Cp2Mg steam is made to flow, and W (microgram) is the total weight of Cp2Mg in the Cp2Mg steam mixed gas which is made to flow in the pipe before the growing of the semiconductor layer to preferably add Mg.
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Inventors:
Naoki Kaneda
Application Number:
JP2003194749A
Publication Date:
May 16, 2007
Filing Date:
July 10, 2003
Export Citation:
Assignee:
Hitachi Cable Ltd.
International Classes:
H01L21/205; H01S5/323; (IPC1-7): H01L21/205; H01S5/323
Domestic Patent References:
| JP9036426A | ||||
| JP3062584A | ||||
| JP8208384A | ||||
| JP10017400A | ||||
| JP1184835A | ||||
| JP6013334A | ||||
| JP7074108A | ||||
| JP2001024212A |
Attorney, Agent or Firm:
Hiroshi Okikawa