垂直共振器型面発光素子

Japanese Patent JP7283694

B2

To provide a vertical resonator type surface light-emitting element for enabling high current injection and high output operation at a low threshold and with high slope efficiency.SOLUTION: A vertical resonator type surface light-emitting element includes a c plane GAN substrate 11 having an off angle, a semiconductor DBR 12 formed on the substrate, a group III nitride semiconductor device layer 22, and a dielectric DBR 27. The device layer comprises: a first semiconductor layer 13, an active layer 15 and a second semiconductor layer 17; a tunnel junction mesa 18 composed of a second conductive type high impurity concentration semiconductor layer 18A and a first conductive type high impurity concentration semiconductor layer 18B sequentially formed on the second semiconductor layer 17; and a semiconductor embedded layer 19. Here, the height H of the tunnel junction mesa, the layer thickness TH of the semiconductor embedded layer, and the thickness layer TB of the first conductive type high impurity concentration semiconductor layer satisfy TB≤H