WAFER AND METHOD OF MANUFACTURING WAFER

Title:

WAFER AND METHOD OF MANUFACTURING WAFER

Document Type and Number:

Japanese Patent JP2003197594

Kind Code:

A

Abstract:

To provide a method of manufacturing wafer in which the number of defects is significantly reduced.

The method of manufacturing wafer comprises a step of preparing a substrate 102, forming a plurality of semiconductor devices 104 and contact pads 110 thereon, and covering these elements with a passivated layer 112; a step of exposing many contact pads 110 connected to the semiconductor devices 104 by etching each part of the passivated layer 112 corresponding to the contact pads 110; and a step of cleaning and rinsing the contact pads 110 by soaking the substrate 102 into the solution of nitric acid. The concentration of nitric acid solution is ranged to 30 vol.% from 0.01 vol.% and more preferably to 10 vol.% from 1 vol.%.

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Inventors:

CHANG FANG-CHU
YU WEN-BIN
WANG HSIN-CHIN

Application Number:

JP2002232026A

Publication Date:

July 11, 2003

Filing Date:

August 08, 2002

Export Citation:

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Assignee:

MICRONICS INT CO LTD

International Classes:

H01L21/304; H01L21/311; H01L21/60; H01L21/306; H01L23/31; (IPC1-7): H01L21/304

Attorney, Agent or Firm:

Masatake Shiga (7 outside)

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