Title:
ウエハスケールのイメージインテンシファイア
Document Type and Number:
Japanese Patent JP7247379
Kind Code:
B2
Abstract:
A method of manufacturing a multi-layer image intensifier wafer includes fabricating first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer; doping a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to a second surface of the semiconductor wafer, bonding a photo-cathode wafer to the first glass wafer; bonding the semiconductor wafer between the first and second glass wafers, and bonding the second glass wafer between the semiconductor wafer and an anode wafer (e.g., a phosphor screen or other electron detector). A section of the multi-layer image intensifier wafer may be sliced and evacuated to provide a multi-layer image intensifier.
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Inventors:
Smith, Arlene W.
Chilcott, Dunn
Chilcott, Dunn
Application Number:
JP2021576122A
Publication Date:
March 28, 2023
Filing Date:
June 17, 2020
Export Citation:
Assignee:
Elbit Systems of America, Elcy
International Classes:
H01J9/12; H01J40/06; H01J43/18
Domestic Patent References:
| JP8153462A | ||||
| JP2011138684A |
Foreign References:
| WO2005078759A1 | ||||
| US5712490 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Osamu Miyazaki
Tadahiko Ito
Osamu Miyazaki