Title:
短パルスを使用する赤外線レーザによるウェハスクライビング
Document Type and Number:
Japanese Patent JP2009544145
Kind Code:
A
Abstract:
Systems and methods are provided for scribing wafers to efficiently ablate passivation and/or encapsulation layers while reducing or eliminating chipping and cracking in the passivation and/or encapsulation layers. Short laser pulses are used to provide high peak powers and reduce the ablation threshold. In one embodiment, the scribing is performed by a q-switched CO2 laser.
Inventors:
O'Brien, James N.
Pirogowski, Peter
Pirogowski, Peter
Application Number:
JP2009512239A
Publication Date:
December 10, 2009
Filing Date:
May 21, 2007
Export Citation:
Assignee:
Electro Scientific Industries, Inc.
International Classes:
H01L21/301; B23K26/00; B23K26/18; B23K26/36
Domestic Patent References:
| JP2002329686A | 2002-11-15 | |||
| JP2002154846A | 2002-05-28 | |||
| JP2002178171A | 2002-06-25 | |||
| JP2006032419A | 2006-02-02 |
Attorney, Agent or Firm:
Yusuke Hiraki
Sekiya Mitsuo
Toshiaki Watanabe
Tsuyoshi Oshio
Sekiya Mitsuo
Toshiaki Watanabe
Tsuyoshi Oshio