Title:
X-RAY MASK BLANK, ITS MANUFACTURE, X-RAY MASK, AND MANUFACTURE THEREFOR
Document Type and Number:
Japanese Patent JP3631017
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To eliminate a pattern distortion or positional fluctuation caused by changes in the film stress of an x-ray absorber pattern for excellence in positional precision by, related to an x-ray mask blank comprising an x-ray absorbing film for absorbing x-ray on an x-ray transmission film, allowing the x-ray absorbing film to contain tantalum, boron, and nitrogen.
SOLUTION: On an x-ray transmission film 12, an x-ray absorbing film 13 is formed by a DC magnetron sputter method using a target of tantalum and boron and such gas wherein xenon is added with nitrogen as a sputter gas (d). With the substrate where the x-ray absorbing film is formed is annealed in an atmosphere, the film stress is changed in a stretching direction, to provide an x-rat absorbing film of low stress. The film composition of x-ray absorbing film is Ta:B:N=78:12:10 (atom % ratio). Then, on the x-ray absorbing film 13, a film comprising chromium and nitrogen is formed as an etching mask layer 14 by the DC magnetron sputtering method.
Inventors:
Lol Ki Tsutomu
Application Number:
JP34105898A
Publication Date:
March 23, 2005
Filing Date:
November 14, 1998
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
H01L21/027; G03F1/22; G21K1/10; (IPC1-7): H01L21/027; G03F1/16
Domestic Patent References:
| JP11297593A | ||||
| JP10079347A | ||||
| JP2192116A | ||||
| JP10083951A | ||||
| JP7263318A |
Attorney, Agent or Firm:
Yasuo Fujimura
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