PURPOSE: To acquire resolving capability of 0.1μm or less by reducing mask/ pattern by reflecting projection exposure method of X-ray and by carrying out step feed or scan-step feed exposure.

CONSTITUTION: Parallel X-rays 11 are irradiated to a reflection mask 12 with a certain angle. Direction and position of a reflection pattern 13 and a reflection mirror 14 need to be set so that one direction X of the reflection pattern 13 is reduced to COS θ1 times a reflection angle θ1 of the reflection mask 12, and the other direction Y of the reflection pattern 13 is reduced to COS θ2 times a reflection angle θ2 at the reflection mirror 14 by the reflection mirror 14 and then projected. A pattern thus reduced is projected and exposed through step-and-repeating by a step-feed 16 of an Si wafer 15. It is possible to carry out reduction projection exposure effectively without loss of X-ray by reflection of X-ray and to acquire resolving of 0.1μm or less readily.