Title:
CAPACITIVE ELEMENT AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018113454
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables scaling or high integration.SOLUTION: A semiconductor device includes: a first trench and a second trench which are formed in an insulation layer; a transistor which has an oxide semiconductor layer and is formed in the first trench; a capacitive element formed so as to overlap the second trench; a first gate electrode formed in an upper layer than the first trench; and a second gate electrode formed in a lower layer than the first trench. By forming the capacitive element so as to overlap the second trench, a capacitance value of the capacitive element can be increased without increase in an occupied area in plan view.SELECTED DRAWING: Figure 1
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Inventors:
YAMAZAKI SHUNPEI
TANAKA TETSUHIRO
UOJI HIDEKI
TANAKA TETSUHIRO
UOJI HIDEKI
Application Number:
JP2018029358A
Publication Date:
July 19, 2018
Filing Date:
February 22, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/822; H01L21/8234; H01L21/8238; H01L21/8242; H01L27/04; H01L27/06; H01L27/088; H01L27/092; H01L27/108; H01L27/146; H01L29/786
Domestic Patent References:
| JP2012195574A | 2012-10-11 | |||
| JP2003152086A | 2003-05-23 | |||
| JP2012178554A | 2012-09-13 | |||
| JP2006228943A | 2006-08-31 | |||
| JP2011233765A | 2011-11-17 |