Title:
A doping device, the doping method, and a manufacturing method of a semiconductor device
Document Type and Number:
Japanese Patent JP5972614
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which provides a doping device adding oxygen and improves electric characteristics.SOLUTION: A doping device includes: a gas introduction part into which an inactive gas is introduced; an arc chamber having a filament generating thermal electrons; a first electrode extracting ions of the inactive gas that is ionized by the arc chamber; a second electrode accelerating the ions of the inactive gas that is extracted by the first electrode; an oxygen ion supply part supplying oxygen ions to a region where the ions of the inactive gas, which are accelerated by the second electrode, pass; and a sample chamber into which the ions of the inactive gas and the oxygen ions are introduced.
More Like This:
Inventors:
Daigo Ito
Application Number:
JP2012052431A
Publication Date:
August 17, 2016
Filing Date:
March 09, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/265; H01J27/02; H01J27/08; H01J27/16; H01J37/08; H01J37/317
Domestic Patent References:
| JP2006147269A | ||||
| JP2011199273A | ||||
| JP2002289106A | ||||
| JP3103309A | ||||
| JP6168879A | ||||
| JP2000340127A |