Title:
ELECTRIC DOUBLE-LAYER TRANSISTOR
Document Type and Number:
Japanese Patent JP2023121376
Kind Code:
A
Abstract:
To control Weil fermion in electrical conduction and magnetic resistance after production of Weil semimetal such as SrRuO3.SOLUTION: An electric double-layer transistor comprises: a thin film 101 formed from a substance comprising Sr1-XAXRu1-YBYO3 (A is an alkali metal or an alkali-earth metal other than Sr, 0≤X≤0.05, and B is a transition metal and 0≤Y≤0.05), and exhibiting a Weil fermion transport phenomenon, of which the requirement for development of the phenomenon is the ratio of a resistivity at 300 K and a resistivity at 4 K is 21 or larger; a source electrode 102 and a drain electrode 103, which are formed on a surface of the thin film 101 so as to be separated from each other; and a carrier-introduction layer 104 formed on the thin film 101 between the source electrode 102 and the drain electrode 103, into which carriers are introduced.SELECTED DRAWING: Figure 1
Inventors:
WAKABAYASHI YUKI
YOSHIHARU KROCKENBERGER
TANIYASU YOSHITAKA
YAMAMOTO HIDEKI
KANEDA SHINGO
OYA SHINOBU
TANAKA MASAAKI
YOSHIHARU KROCKENBERGER
TANIYASU YOSHITAKA
YAMAMOTO HIDEKI
KANEDA SHINGO
OYA SHINOBU
TANAKA MASAAKI
Application Number:
JP2022024687A
Publication Date:
August 31, 2023
Filing Date:
February 21, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
UNIV TOKYO
UNIV TOKYO
International Classes:
H01L29/786
Attorney, Agent or Firm:
Shigeki Yamakawa
Yuzo Koike
Masaki Yamakawa
Yasushi Motoyama
Yuzo Koike
Masaki Yamakawa
Yasushi Motoyama
Previous Patent: laser processing machine
Next Patent: Film forming apparatus, film forming method, and electronic device manufacturing method
Next Patent: Film forming apparatus, film forming method, and electronic device manufacturing method