Title:
GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING THEM
Document Type and Number:
Japanese Patent JP2016128381
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a large-sized bulk crystal having a gallium nitride crystal and a group 13 nitride crystal and cut into a crystal substrate having a practical size.SOLUTION: A needle seed crystal 25 is a gallium nitride crystal 25 having the shape of a cross section perpendicular to a c-axis being hexagonal or approximately hexagonal, 9 mm or more of a length L of the c-axis, 100 μm or more of a crystal diameter (d) of the cross section perpendicular to the c-axis, 7 or more of a ration L/d of the length L of the c-axis to the crystal diameter (d) of the cross section perpendicular to the c-axis, and six side surfaces parallel to the c-axis being m-planes. In a method for manufacturing a large sized bulk crystal 80, the bulk crystal 80 having a large volume and cut into a crystal substrate having a practical size is manufactured by growing the long needle crystal 25.SELECTED DRAWING: Figure 5
Inventors:
IWATA HIROKAZU
NANBU HIROSHI
SATO TAKASHI
NANBU HIROSHI
SATO TAKASHI
Application Number:
JP2016029132A
Publication Date:
July 14, 2016
Filing Date:
February 18, 2016
Export Citation:
Assignee:
RICOH CO LTD
International Classes:
C30B29/38; C30B9/12; C30B25/20
Domestic Patent References:
| JP2004231447A | 2004-08-19 | |||
| JP2008110910A | 2008-05-15 | |||
| JP2009179505A | 2009-08-13 | |||
| JP2009212284A | 2009-09-17 | |||
| JP2006290671A | 2006-10-26 |
Foreign References:
| WO2009039398A1 | 2009-03-26 |
Attorney, Agent or Firm:
Hiroaki Sakai
Previous Patent: A mold press forming device and a manufacturing method of an optical element
Next Patent: Slaked lime and an acidic gas removal agent
Next Patent: Slaked lime and an acidic gas removal agent