Title:
A half-tone phase shift type photomask blank, a half-tone phase shift type photomask, and a pattern exposure method
Document Type and Number:
Japanese Patent JP6264238
Kind Code:
B2
Abstract:
A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film is provided. The phase shift film consists of Si and N, or Si, N and O, and is free of transition metals. The phase shift film has a thickness of 40-70 nm, offers a transmittance of 10-40% and a phase shift of 150-200° relative to light of wavelength up to 200 nm, and is resistant to cleaning chemicals.
Inventors:
Judge Inazuki
Toyohisa Sakurada
Hero Kaneko
High Takuro Saka
Kohei Sasamoto
Toyohisa Sakurada
Hero Kaneko
High Takuro Saka
Kohei Sasamoto
Application Number:
JP2014184992A
Publication Date:
January 24, 2018
Filing Date:
September 11, 2014
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F1/32
Domestic Patent References:
| JP7134392A | ||||
| JP9015831A |
Foreign References:
| US20070243491 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki