Title:
An organic thin film transistor, an organic semiconductor thin film, and an organic semiconductor material
Document Type and Number:
Japanese Patent JP6061886
Kind Code:
B2
Abstract:
An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. In the formula (1), A 1 and A 2 each independently represent a sulfur atom, an oxygen atom or a selenium atom; and R 1 to R 6 each independently represent a hydrogen atom or a substituent, provided that at least one of R 1 to R 6 represents a substituent represented by *-L-R wherein L represents a divalent linking group or a divalent linking group consisting of 2 or more divalent linking groups bonded sequentially and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group having a repeating number of 2 or more, an oligosiloxane group having 2 or more silicon atoms, or a trialkylsilyl group.
Inventors:
Yasuhisa Yoneda
Koji Takahisa
Toyama
Koji Takahisa
Toyama
Application Number:
JP2014048650A
Publication Date:
January 18, 2017
Filing Date:
March 12, 2014
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L51/30; C07D498/06; C07D513/06; C07D517/06; C07F7/10; H01L21/336; H01L29/786; H01L51/05; H01L51/40
Domestic Patent References:
| JP6073065A | ||||
| JP2010186056A | ||||
| JP59058433A | ||||
| JP2012184218A |
Foreign References:
| DE2224746A |
Other References:
John S. ZAMBOUNIS et al.,"Synthesis, Properties, and Metallic Cation Radical Salts of a New Class of Electron .pi.-Donors: 2,,Journal of the American Chemical Society,米国,American Chemical Society,1994年,Vol.116,p.925-931
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes
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