Processing method of silicon carbide single crystal substrate and silicon carbide single crystal substrate with jig

Title:

Processing method of silicon carbide single crystal substrate and silicon carbide single crystal substrate with jig

Document Type and Number:

Japanese Patent JP6327519

Kind Code:

B2

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Inventors:

Hiroyuki Okuda
Yoshihiko Kondo

Application Number:

JP2014154798A

Publication Date:

May 23, 2018

Filing Date:

July 30, 2014

Export Citation:

Assignee:

Hitachi Metals Co., Ltd.

International Classes:

H01L21/304; B24B1/00; B24B37/30

Domestic Patent References:

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