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Title:
A semiconductor device, a manufacturing method for the same, a composite-molding object
Document Type and Number:
Japanese Patent JP5983700
Kind Code:
B2
Abstract:
An object is to form a rough surface for ensuring adhesion between a metal member and other members, or a rough surface for suppressing solder expansion in the metal member using an energy beam having energy density lower than a related art. A surface processing method of a metal member, in which a metal thin film is arranged on a surface of a base, includes: melting or evaporating a surface portion of the metal thin film by irradiating the metal thin film with a pulse-oscillated laser beam having energy density of 100 J/cm2 or less and a pulse width of 1 μs or less; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating. The metal thin film is made of at least one of Ni, Au, Pd, and Ag as a main component.

Inventors:
Wataru Kobayashi
Eiji Hayashi
Kazuki Kanda
Application Number:
JP2014210764A
Publication Date:
September 06, 2016
Filing Date:
October 15, 2014
Export Citation:
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Assignee:
株式会社デンソー
International Classes:
B23K26/354; B23K26/00; B23K26/08; B29C45/14; C23C26/00
Domestic Patent References:
JP2006303216A
JP2006007284A
JP2003211400A
JP10156570A
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office