Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023168494
Kind Code:
A
Abstract:
To provide a semiconductor device with good electrical characteristics, and to provide a semiconductor device with high reliability.SOLUTION: A semiconductor device has a first transistor, a second transistor, a first insulating layer, and a second insulating layer. The first transistor has a first semiconductor layer, a first gate insulating layer, and a first gate electrode. The first semiconductor layer contains a metal oxide. The second transistor has a second semiconductor layer, a second gate insulating layer, and a second gate electrode. The second semiconductor layer contains crystalline silicon. The first insulating layer has a region overlapped with the first transistor via the second insulating layer. The second insulating layer has a region overlapped with the second transistor via the first insulating layer. The film density of the second insulating layer is higher than that of the first insulating layer.SELECTED DRAWING: Figure 1
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Inventors:
SHIMA YUKINORI
OKAZAKI KENICHI
OKAZAKI KENICHI
Application Number:
JP2023172058A
Publication Date:
November 24, 2023
Filing Date:
October 03, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L29/786