Title:
半導体装置
Document Type and Number:
Japanese Patent JP7186931
Kind Code:
B2
Abstract:
An object of the present invention is to provide a technique capable of reducing a gap between a first semiconductor device and a second semiconductor device that are bonded. At least one of a pair of a first electrode of the first semiconductor device and a second electrode of the second semiconductor device and a pair of a second electrode of the first semiconductor device and a first electrode of the second semiconductor device is electrically connected, and for each of the first semiconductor device and the second semiconductor device, each of a thickness of a portion from a first connected portion to a second connected portion and a thickness of a holding member are equal to or less than a thickness of a first main body portion or a thickness of a second main body portion.
Inventors:
白▲濱▼ 亮弥
Shin Iizuka
Okamoto
Shin Iizuka
Okamoto
Application Number:
JP2022539861A
Publication Date:
December 09, 2022
Filing Date:
July 29, 2020
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L25/18
Domestic Patent References:
| JP2012110207A | ||||
| JP2014093421A | ||||
| JP2019145776A | ||||
| JP2019207922A |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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