Title:
3-D TRANSFORMER FOR HIGH FREQUENCY APPLICATIONS
Document Type and Number:
WIPO Patent Application WO2006063193
Kind Code:
A3
Abstract:
A stressed metal technology may fabricate high-Q, three-dimensional microelectronic inductors and transformers. The fabrication method may allow the production of inductors and transformers on high-resistivity silicon substrate and with metal deposition of Au and Cr that is fully compatible with semiconductor fabrication technologies. The produced inductors and transformers exhibit Q factors > 60 at frequencies of 3 to 7 GHz. High efficiency, high-Q transformers with coupling factors 0.6
Inventors:
WEON DAEHEE (US)
MOHAMMADI SAEED (US)
JEON JONG-HYEOK (US)
KATEHI LINDA (US)
MOHAMMADI SAEED (US)
JEON JONG-HYEOK (US)
KATEHI LINDA (US)
Application Number:
PCT/US2005/044536
Publication Date:
December 28, 2006
Filing Date:
December 07, 2005
Export Citation:
Assignee:
PURDUE RESEARCH FOUNDATION (US)
WEON DAEHEE (US)
MOHAMMADI SAEED (US)
JEON JONG-HYEOK (US)
KATEHI LINDA (US)
WEON DAEHEE (US)
MOHAMMADI SAEED (US)
JEON JONG-HYEOK (US)
KATEHI LINDA (US)
International Classes:
H01F7/06; H01F5/00; H01F27/28
Foreign References:
US6582989B2 | 2003-06-24 | |||
US6114937A | 2000-09-05 | |||
US7023315B2 | 2006-04-04 | |||
US6798039B1 | 2004-09-28 | |||
US6147582A | 2000-11-14 | |||
US6429764B1 | 2002-08-06 |
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