ABRASIVE SLURRY, ABRASIVE SET, AND METHOD FOR GRINDING SUBSTRATE

WIPO Patent Application WO/2010/143579

A1

Provided is an abrasive slurry comprising water, abrasive grains, and one or more additives, wherein the abrasive grains comprise particles of the hydroxide of a tetravalent metal and at least one of the additives is polyvinyl alcohol having a degree of saponification of 95 mol% or lower. Also provided are: an abrasive set that comprises portions of the abrasive slurry, one of which is a slurry containing particles and the other of which is an additive liquid containing an additive, the portions being separately stored; and a method for grinding a substrate, wherein a film to be ground is ground using the abrasive slurry. With the abrasive slurry, the abrasive set, and the substrate-grinding method, it is possible to rapidly grind an insulating film, e.g., a silicon oxide film, while minimizing scratches, in the CMP technique for making STI dielectric films, pre-metal dielectric films, interlayer dielectrics, etc. planar. The abrasive slurry has a high insulating film/polysilicon film grinding rate ratio.

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RYUZAKI DAISUKE (JP)
HOSHI YOUSUKE (JP)
NOBE SHIGERU (JP)
ENOMOTO KAZUHIRO (JP)

PCT/JP2010/059436

December 16, 2010

June 03, 2010

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HITACHI CHEMICAL CO LTD (JP)
RYUZAKI DAISUKE (JP)
HOSHI YOUSUKE (JP)
NOBE SHIGERU (JP)
ENOMOTO KAZUHIRO (JP)

H01L21/304; B24B37/00; C09K3/14

JP2009010402A	2009-01-15
JP2008053414A	2008-03-06
JP2003327954A	2003-11-19
JP2008085058A	2008-04-10
JP2005167271A	2005-06-23

MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)

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