Title:
ACOUSTIC WAVE RESONATOR MANUFACTURING METHOD AND ACOUSTIC WAVE RESONATOR
Document Type and Number:
WIPO Patent Application WO/2022/170683
Kind Code:
A1
Abstract:
The present application relates to an acoustic wave resonator manufacturing method and an acoustic wave resonator. The method comprises: preparing a first laminated layer on a piezoelectric wafer substrate, bonding the side of the first laminated layer away from the piezoelectric wafer substrate to a bearing wafer, and preparing a second laminated layer after thinning the side of the piezoelectric wafer substrate away from the first laminated layer, and forming the acoustic wave resonator. In the acoustic wave resonator manufactured by the method, the second laminated layer, the piezoelectric wafer substrate, the first laminated layer, and the bearing wafer are arranged in a laminated mode, the bearing wafer plays a bearing role, a piezoelectric thin film formed by thinning the piezoelectric wafer substrate can be excited to vibrate acoustically, and the first laminated layer and the second laminated layer can transmit electric signals and bound acoustic signals, such that the obtained acoustic wave resonator can work under high frequency, and the acoustic wave resonator has a specific lamination combination and a piezoelectric thin film, can excite and support a high-performance acoustic vibration mode, and is low in loss, high in quality factor, wide in bandwidth, low in temperature sensitivity, and high in use reliability.
Inventors:
GONG SONGBIN (CN)
VIDAL-ALVAREZ GABRIEL (CN)
VIDAL-ALVAREZ GABRIEL (CN)
Application Number:
PCT/CN2021/092048
Publication Date:
August 18, 2022
Filing Date:
May 07, 2021
Export Citation:
Assignee:
SPECTRON SHENZHEN TECH CO LTD (CN)
International Classes:
H03H9/17
Foreign References:
| CN111669144A | 2020-09-15 | |||
| CN111490742A | 2020-08-04 | |||
| CN110445474A | 2019-11-12 | |||
| CN112152581A | 2020-12-29 | |||
| US20190319602A1 | 2019-10-17 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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