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Title:
ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/048282
Kind Code:
A1
Abstract:
The present invention pertains to: active-ray-sensitive or radiation-sensitive resin composition that contains a compound represented by formula (Z-1) set forth in the description and a resin in which the polarity increases when being broken down by the action of an acid; and an active-ray-sensitive or radiation-sensitive film, a pattern formation method, and an electronic device manufacturing method which use said active-ray-sensitive or radiation-sensitive resin composition. Accordingly, provided are: an active-ray-sensitive or radiation-sensitive resin composition that has excellent resolution, excellent initial LWR performance, and excellent LWR performance after being aged; and the like.

Inventors:
KAMINO YUKA (JP)
YOSHIOKA TOMOAKI (JP)
Application Number:
PCT/JP2023/029609
Publication Date:
March 07, 2024
Filing Date:
August 16, 2023
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/004; G03F7/039; G03F7/20
Foreign References:
JP2010505787A2010-02-25
Other References:
TOSHIKAGE ASAKURA, HITOSHI YAMAMOTO, YUICHI NISHIMAE, KEIZO OKADA, MASAKI OHWA: "PAG Study in EUV Lithography", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, TECHNICAL ASSOCIATION OF PHOTOPOLYMERS JAPAN, JP, vol. 22, no. 1, 1 January 2009 (2009-01-01), JP , pages 89 - 95, XP055369931, ISSN: 0914-9244, DOI: 10.2494/photopolymer.22.89
Attorney, Agent or Firm:
KOH-EI, P.C. (JP)
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