ADJUSTMENT METHOD AND PLASMA TREATMENT DEVICES

WIPO Patent Application WO/2024/005004

A1

Provided is a technique for compensating for difference between devices that occur between a plurality of plasma treatment devices. An adjustment method comprises: a step for acquiring reference distribution data in a first plasma treatment device having a first chamber and a first substrate support unit disposed in the first chamber, the reference distribution data being related to the distribution of ion fluxes generated between plasma generated inside the first chamber and a substrate disposed to the first substrate support unit; a step for acquiring distribution data in a second plasma treatment device having a second chamber and a second substrate support unit disposed in the second chamber, the distribution data being related to the distribution of ion fluxes generated between plasma generated inside the second chamber and a substrate disposed to the second substrate support unit; and a step for adjusting elements capable of adjusting the ion fluxes in the second plasma treatment device on the basis of the distribution data acquired in the second plasma treatment device and the reference distribution data acquired in the first plasma treatment device.

JPH0613354	SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
JPS60149136	MANUFACTURE OF SEMICONDUCTOR DEVICE
JP2011150943	PLASMA PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD EMPLOYING THE SAME

MATSUMOTO NAOKI (JP)
OZU TOSHIHISA (JP)
NAKAMURA SATORU (JP)
SHIMIZU YUSUKE (JP)

PCT/JP2023/023761

January 04, 2024

June 27, 2023

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TOKYO ELECTRON LTD (JP)

H01L21/3065; H05H1/46

US20200051787A1	2020-02-13
JP2009540569A	2009-11-19
JP2014513390A	2014-05-29
JP2008041651A	2008-02-21
US6326794B1	2001-12-04
JPH08213374A	1996-08-20

SATO, Atsushi et al. (JP)

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