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Title:
ALKOXIDE COMPOUND AND RAW MATERIAL FOR FORMING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2013/018413
Kind Code:
A1
Abstract:
An alkoxide compound represented by general formula (I); and a raw material for forming a thin film, which comprises the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2-4 carbon atoms; and R2 and R3 independently represent a linear or branched alkyl group having 1-4 carbon atoms. In general formula (I), it is preferred that R1 is an ethyl group. It is also preferred that R2 and/or R3 is an ethyl group. The raw material for forming a thin film which comprises an alkoxide compound represented by general formula (I) is preferably used as a raw material for a chemical vapor deposition method.

Inventors:
WADA SENJI (JP)
SAITO AKIO (JP)
YOSHINO TOMOHARU (JP)
Application Number:
PCT/JP2012/062390
Publication Date:
February 07, 2013
Filing Date:
May 15, 2012
Export Citation:
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Assignee:
ADEKA CORP (JP)
WADA SENJI (JP)
SAITO AKIO (JP)
YOSHINO TOMOHARU (JP)
International Classes:
C07C215/08; C23C16/18; H01L21/285; C07F15/04
Domestic Patent References:
WO2005063685A12005-07-14
Foreign References:
JP2008537947A2008-10-02
JP2006143693A2006-06-08
Other References:
WERNDRUP, PIA ET AL.: "A single-source-precursor approach to late transition metal molybdate materials: the structural role of chelating ligands in the formation of heterometallic heteroleptic alkoxide complexes", EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2006, pages 1413 - 1422
Attorney, Agent or Firm:
HATORI, Osamu (JP)
Osamu Hatori (JP)
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Claims: