Title:
ALUMINUM COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM, AND METHOD FOR PRODUCING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2013/105310
Kind Code:
A1
Abstract:
An aluminum compound represented by chemical formula (I); a starting material for forming a thin film, which contains the aluminum compound; and a method for producing a thin film, wherein a vapor which is obtained by vaporizing the starting material for forming a thin film and contains the aluminum compound is introduced into a film formation chamber in which a base is disposed, and the aluminum compound is decomposed and/or subjected to a chemical reaction so that a thin film containing aluminum is formed on the surface of the base. Since the physical properties of the aluminum compound, which serves as the precursor for the starting material for forming a thin film of the present invention, are suitable for a CVD method and an ALD method, the starting material for forming a thin film is especially useful as a starting material for chemical vapor deposition.
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Inventors:
HATASE MASAKO (JP)
YAMADA NAOKI (JP)
SAKURAI ATSUSHI (JP)
SHIRATORI TSUBASA (JP)
YAMADA NAOKI (JP)
SAKURAI ATSUSHI (JP)
SHIRATORI TSUBASA (JP)
Application Number:
PCT/JP2012/075334
Publication Date:
July 18, 2013
Filing Date:
October 01, 2012
Export Citation:
Assignee:
ADEKA CORP (JP)
International Classes:
C07F5/06; C23C16/40; H01L21/316
Domestic Patent References:
| WO2004013377A1 | 2004-02-12 |
Attorney, Agent or Firm:
HATORI, Osamu (JP)
Osamu Hatori (JP)
Osamu Hatori (JP)
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Claims: