Title:
ALUMINUM NITRIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING GROUP III NITRIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2023/127455
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for producing a group III nitride single crystal, the method comprising a growth step for vapor-phase growing a group III nitride single crystal on a base substrate, while providing a group III nitride single crystal substrate that is suppressed in in-plane variation of the atomic vacancy concentration. This method for producing a group III nitride single crystal has, before the growth step, a pretreatment step in which a pre-growth gas that contains an etching gas having an etching effect with respect to the base substrate is supplied onto the base substrate at least after reaching the etching temperature at which the base substrate is etched; and in the pretreatment step, the etching gas is supplied so that the product of a first index that shows the proportion of the supply amount of etching gas to the total supply amount of the pre-growth gas and a second index that shows the amount of time from the pretreatment initiation time at which the supply of the etching gas is started after reaching the etching temperature until the growth initiation time at which the growth step is started is 150 vol%∙second to 20,000 vol%.
Inventors:
HITOMI TATSUYA (JP)
ARINOMI TAKASHI (JP)
YAMAMOTO REO (JP)
NAGASHIMA TORU (JP)
ARINOMI TAKASHI (JP)
YAMAMOTO REO (JP)
NAGASHIMA TORU (JP)
Application Number:
PCT/JP2022/045333
Publication Date:
July 06, 2023
Filing Date:
December 08, 2022
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C30B29/38; C23C16/02; C23C16/34; C23C16/455; C30B25/14; C30B25/20; H01L21/205
Domestic Patent References:
| WO2018123285A1 | 2018-07-05 |
Foreign References:
| JP2020075850A | 2020-05-21 | |||
| JP2002145700A | 2002-05-22 |
Attorney, Agent or Firm:
YAMAMOTO, Noriaki et al. (JP)
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