APPARATUS AND METHOD FOR MANUFACTURING A POLYCRYSTALLINE SILICON THIN FILM

WIPO Patent Application WO/2010/128783

A3

The present invention relates to an apparatus and method for manufacturing a polycrystalline silicon thin film, and to an apparatus and method for manufacturing a polycrystalline silicon thin film which prevent a surface of a substrate from being fractured, improve production yields in processes, and reduce manufacturing costs. The present invention provides an apparatus for manufacturing a polycrystalline silicon thin film, comprising: a support unit on which a substrate is loaded; a first conductor and a second conductor arranged on the support unit in parallel to the direction of an supplied current; and a power supply unit arranged in the vicinity of the support unit to supply power. In addition, the present invention provides a method for manufacturing a polycrystalline silicon thin film, which involves applying power to a conductive thin film of a substrate on which an amorphous silicon thin film and the conductive thin film are formed to crystallize the amorphous silicon thin film, wherein said method comprises placing the substrate between a first conductor and a second conductor arranged on a support, and applying the voltage supplied by a power supply source to the conductive thin film and first and second conductors to crystallize the amorphous silicon thin film.

RO JAE-SANG (KR)
HONG WON-EUI (KR)

PCT/KR2010/002800

February 03, 2011

May 03, 2010

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ENSILTECH CORP (KR)
RO JAE-SANG (KR)
HONG WON-EUI (KR)

H01L21/20

KR20040039730A	2004-05-12
KR100836744B1	2008-06-10
KR20040045236A	2004-06-01

CHOI, Young-Bok (Hwanghwa Bldg.,832-7, Yeoksam-dong, Gangnam-gu, Seoul 135-936, KR)

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