Title:
ATOMIC LAYER DEPOSITION DEVICE AND METHOD
Document Type and Number:
WIPO Patent Application WO/2023/000372
Kind Code:
A1
Abstract:
An atomic layer deposition device and method. The atomic layer deposition device comprises: a bearing assembly, which comprises a reaction cavity (130) used for accommodating powder to be used for coating; a first spray head (200), wherein the first spray head (200) is located below the reaction cavity (130), and the first spray head (200) comprises a plurality of downward spray-in channels provided in a first direction and downward discharge channels provided between adjacent downward spray-in channels, the downward spray-in channels being used for spraying a gas to the reaction cavity (130), and the downward discharge channels being used for discharging excess gas in the reaction cavity (130); a gas source assembly (500), wherein the gas source assembly (500) is connected to the first spray head (200), the gas source assembly (500) is used for supplying the gas to the various downward spray-in channels, and in the first direction, in the adjacent downward spray-in channels, the gas introduced into one of the downward spray-in channels is a carrier gas; and a driving assembly, which is used for driving the powder to be used for coating to move in the first direction.
Inventors:
CHEN RONG (CN)
LI JIAWEI (CN)
SHAN BIN (CN)
LIU XIAO (CN)
XIANG JUNREN (CN)
SHAO HUACHEN (CN)
LI JIAWEI (CN)
SHAN BIN (CN)
LIU XIAO (CN)
XIANG JUNREN (CN)
SHAO HUACHEN (CN)
Application Number:
PCT/CN2021/109586
Publication Date:
January 26, 2023
Filing Date:
July 30, 2021
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
HUST WUXI RES INSTITUTE (CN)
HUST WUXI RES INSTITUTE (CN)
International Classes:
C23C16/455
Foreign References:
| US20180363136A1 | 2018-12-20 | |||
| US20040067641A1 | 2004-04-08 | |||
| KR20160137743A | 2016-12-01 | |||
| CN106032573A | 2016-10-19 | |||
| CN107502873A | 2017-12-22 | |||
| CN103628045A | 2014-03-12 |
Other References:
CHU BO, HE WENJIE, GAO YULE CHEN, ＲONG: "Optimization of Spatially-Separated Atomic Layer Deposition Conditions", ZHENKONG-KEXUE-YU-JISHU-XUEBAO = CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, BEIJING, 2004- ZHONGGUO ZHENKONG XUEHUI, CN, vol. 35, no. 7, 31 July 2015 (2015-07-31), CN , pages 892 - 896, XP093027142, ISSN: 1672-7126, DOI: 10.13922/j.cnki.cjovst.2015.07.18
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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