BACK-GATE FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME

WIPO Patent Application WO/2019/148170

A3

A back-gate carbon nanotube field effect transistor (CNFETs) provides: (1) reduced parasitic capacitance, which decreases the energy-delay product (EDP) thus improving the energy efficiency of digital systems (e.g., very-large-scale integrated circuits) and (2) scaling of transistors to smaller technology nodes (e.g., sub-3 nm nodes). An exemplary back-gate CNFET includes a channel. A source and a drain are disposed on a first side of the channel. A gate is disposed on a second side of the channel opposite to the first side. In this manner, the contacted gate pitch (CGP) of the back-gate CNFET may be scaled down without scaling the physical gate length (Lԍ) or contact length (Lc). The gate may also overlap with the source and/or the drain in this architecture. In one example, an exemplary CNFET was demonstrated to have a CGP less than 30 nm and 1.6x improvement to EDP compared to top-gate CNFETs.

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JP2013157587	COMPOUND SEMICONDUCTOR
WO/2004/061027	METHODS FOR POLISHING AND/OR CLEANING COPPER INTERCONNECTS AND/OR FILM AND COMPOSITIONS THEREFOR

SHULAKER MAX (US)
SRIMANI TATHAGATA (US)
FULLER SAMUEL (US)
STEIN YOSI (US)
MURPHY DENIS (US)

PCT/US2019/015595

April 16, 2020

January 29, 2019

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MASSACHUSETTS INST TECHNOLOGY (US)
SHULAKER MAX (US)
SRIMANI TATHAGATA (US)
FULLER SAMUEL (US)
STEIN YOSI (US)
MURPHY DENIS (US)

H01L21/02; H01L29/02; H01L29/732

WO2017001406A2

2017-01-05

US8785911B2	2014-07-22
US9209288B2	2015-12-08
US8557659B2	2013-10-15
US20170179283A1	2017-06-22
US6191724B1	2001-02-20
US6462929B2	2002-10-08
EP0190070B1	1992-08-26

COLICE, Christopher Max et al. (US)

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