BACKSIDE INCIDENT-TYPE IMAGING ELEMENT

Title:

BACKSIDE INCIDENT-TYPE IMAGING ELEMENT

Document Type and Number:

WIPO Patent Application WO/2021/049140

Kind Code:

A1

Abstract:

This backside incident-type imaging element comprises: a semiconductor substrate which has a front surface and a rear surface opposite to the front surface and to which the ground potential is applied; and a semiconductor layer formed on the front surface. The semiconductor layer has: a first element unit that includes a light reception part for generating signal charges according to light incident from the rear surface side, and outputs a signal voltage corresponding to the signal charges; and a second element unit that includes an analog-to-digital converter for converting the signal voltage output from the first element unit into a digital signal. The thickness of the semiconductor substrate in a first direction intersecting the front surface and the rear surface is relatively larger in a second region, of the semiconductor substrate, corresponding to the analog-to-digital converter when viewed from the first direction than a first region, of the semiconductor substrate, corresponding to the reception unit when viewed from the first direction.

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Inventors:

MURAMATSU MASAHARU (JP)
TAKAGI SHIN-ICHIRO (JP)
YONETA YASUHITO (JP)

Application Number:

PCT/JP2020/026253

Publication Date:

March 18, 2021

Filing Date:

July 03, 2020

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)

International Classes:

H01L27/146; H01L27/148; H04N5/369; H04N5/378

Foreign References:

JPH10125884A	1998-05-15
JP2004064410A	2004-02-26
JPH10125885A	1998-05-15

Other References:

PIERRE BOULENCJO ROBBELEINLINKUN WUVASYL MOTSNYILUC HASPESLAGHSTEFANO GUERRIERIJONATHAN BORREMANSMAARTEN ROSMEULEN, HIGH SPEED BACKSIDE ILLUMINATED TDI CCD-IN-CMOS SENSOR, 29 July 2019 (2019-07-29), Retrieved from the Internet
See also references of EP 3955302A4

Attorney, Agent or Firm:

HASEGAWA Yoshiki et al. (JP)

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