Title:
BONDED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/182246
Kind Code:
A1
Abstract:
A bonded substrate according to the present disclosure comprises: a piezoelectric substrate that is formed of a piezoelectric material; a supporting substrate that is formed of a single crystal silicon; an intermediate layer that is formed of an oxide and is positioned between the piezoelectric substrate and the supporting substrate; and an amorphous layer that bonds the intermediate layer and the supporting substrate to each other. The amorphous layer contains oxygen, argon, silicon, and an intermediate layer element other than oxygen, the intermediate layer element being a constituent element of the intermediate layer. At the interface between the supporting substrate and the amorphous layer, in cases where the intermediate layer is formed of silicon oxide, oxygen is contained at a ratio of 3 atom% or more, and in cases where the intermediate layer is formed of an oxide other than silicon oxide, oxygen and the intermediate layer element are contained at a ratio of 3 atom% or more in total.
Inventors:
SHIMIZU YOSUKE (JP)
NISHI KENICHI (JP)
NAKAGAWA TOMOHIRO (JP)
NISHI KENICHI (JP)
NAKAGAWA TOMOHIRO (JP)
Application Number:
PCT/JP2023/010789
Publication Date:
September 28, 2023
Filing Date:
March 20, 2023
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H03H9/25
Domestic Patent References:
| WO2019244471A1 | 2019-12-26 | |||
| WO2021215466A1 | 2021-10-28 | |||
| WO2020079958A1 | 2020-04-23 | |||
| WO2020079959A1 | 2020-04-23 |
Attorney, Agent or Firm:
BUNA PATENT ATTORNEYS (JP)
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