Title:
BUFFER ETCHING SOLUTION FOR NONMETAL OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2023/102726
Kind Code:
A1
Abstract:
Disclosed in the present invention is a buffer etching solution for a non-metal oxide film. The buffer etching solution comprises hydrofluoric acid, ammonium fluoride, a penetrant, water and a composite modifier, wherein the composite modifier is composed of a compound as shown in formula (I) and a compound as shown in formula (II) at a molar feed ratio of (2-8) : 1: N(CnF2n+1)3 (I), wherein n is an integer selected from 2-10; and NH2-C(CmH2m+1)2-CH2OH (II), wherein n is an integer selected from 1-6. The etching solution of the present invention has a relatively strong ability in terms of the selective etching of silicon dioxide and a high etching speed, and is also substantially prevented from over-etching polycrystalline silicon and glass substrates.
Inventors:
GAO XIAOYUN (CN)
LIU BING (CN)
LIU BING (CN)
Application Number:
PCT/CN2021/136060
Publication Date:
June 15, 2023
Filing Date:
December 07, 2021
Export Citation:
Assignee:
CRYSTAL CLEAR ELECTRONIC MAT CO LTD (CN)
CRYSTAL CLEAR HUBEI ELECTRONIC MAT CO LTD (CN)
CRYSTAL CLEAR HUBEI ELECTRONIC MAT CO LTD (CN)
International Classes:
C09K13/08; C23F1/18; H01L21/306
Foreign References:
| CN103756681A | 2014-04-30 | |||
| JPS63283028A | 1988-11-18 | |||
| CN109689215A | 2019-04-26 | |||
| CN103890234A | 2014-06-25 | |||
| CN103992043A | 2014-08-20 |
Other References:
XIANG ZHENNIE, CHUAN -JI, JING HOU: "A Chemical Polish-etching of Optics Suface Based on the Marangoni Interface Effect", JOURNAL OF OPTOELECTRONICS.LASER. 2007(10) PAGE:1158-1161, vol. 18, no. 10, 1 October 2007 (2007-10-01), pages 1158 - 1161, XP093070701, DOI: 10.16136/j.joel.2007.10.021
Attorney, Agent or Firm:
SUZHOU CREATOR PATENT & TRADEMARK AGENCY, LTD. (CN)
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