Title:
BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD, BULK ACOUSTIC WAVE RESONATOR UNIT, FILTER AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/109426
Kind Code:
A1
Abstract:
The present invention relates to a single crystal thin film bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode connected with the bottom electrode pins; a top electrode connected with the top electrode pins; and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein: the piezoelectric layer is a single crystal thin film piezoelectric layer; the acoustic mirror, the bottom electrode, the top electrode and the single crystal thin film piezoelectric layer together form an effective area of the resonator in an overlapping region in the thickness direction of the resonator. The non-lead end of the top electrode and the non-lead end of the bottom electrode both can be spaced apart from the edge of the acoustic mirror in the projection in the thickness direction of the resonator. The present invention further relates to a method for manufacturing a single crystal thin film bulk acoustic wave resonator, a single crystal thin film bulk acoustic resonator unit having the above single crystal thin film resonator, and an electronic device.
Inventors:
ZHANG MENGLUN (CN)
PANG WEI (CN)
YANG QINGRUI (CN)
PANG WEI (CN)
YANG QINGRUI (CN)
Application Number:
PCT/CN2020/086564
Publication Date:
June 10, 2021
Filing Date:
April 24, 2020
Export Citation:
Assignee:
UNIV TIANJIN (CN)
ROFS MICROSYSTEM TIANJIN CO LTD (CN)
ROFS MICROSYSTEM TIANJIN CO LTD (CN)
International Classes:
H03H9/17; H03H3/02; H03H9/02; H03H9/54
Foreign References:
| CN1301591C | 2007-02-21 | |||
| US20190181831A1 | 2019-06-13 | |||
| CN205792476U | 2016-12-07 |
Attorney, Agent or Firm:
BEIJING JINCHENG TONGDA & NEAL LAW FIRM (CN)
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