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Patent Searching and Data


Title:
CASCODE HETEROJUNCTION BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/170045
Kind Code:
A1
Abstract:
Disclosed is a cascode heterojunction bipolar transistor, provided on a packaging substrate. The packaging substrate is provided with a heat sink; the cascode heterojunction bipolar transistor comprises a common-base heterojunction bipolar transistor having a first base, a first emitter, and a first collector and a common-emitter heterojunction bipolar transistor having a second base, a second emitter, and a second collector, as well as a thermal shunt bridge for connecting to the first emitter and the second collector, a first bonding pad and a first copper column for connecting to the first base, a second bonding pad and a second copper column for connecting to the first collector, a third bonding pad and a third copper column for connecting to the second base, and a fourth copper column provided above the second emitter; the cascode heterojunction bipolar transistor is inversely mounted on the packaging substrate; the fourth copper column is welded on the heat sink. The cascode heterojunction bipolar transistor of the present invention is high in gain, degree of linearity, and temperature stability.

Inventors:
LIU HONGGANG (CN)
YUAN ZHIPENG (CN)
Application Number:
PCT/CN2019/076793
Publication Date:
September 12, 2019
Filing Date:
March 04, 2019
Export Citation:
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Assignee:
WAYTHON INTELLIGENT TECH SUZHOU CO LTD (CN)
International Classes:
H01L29/737; H01L23/367; H01L29/06
Foreign References:
CN108598158A2018-09-28
US5066926A1991-11-19
JP2004095714A2004-03-25
CN103022332A2013-04-03
Attorney, Agent or Firm:
SUZHOU CREATOR PATENT & TRADEMARK AGENCY LTD. (CN)
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