Title:
CAVITY-TYPE BULK ACOUSTIC RESONATOR WITHOUT NEED TO PREPARE SACRIFICIAL LAYER AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/181816
Kind Code:
A1
Abstract:
Provided in the present invention are a cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer, and a preparation method therefor, comprising the following steps: taking a piezoelectric single crystal wafer subjected to ion implantation and having a bottom electrode, and forming a cavity on the side of the piezoelectric single crystal wafer having the bottom electrode; then taking a substrate, and bonding the substrate to the side of the piezoelectric single crystal wafer having the cavity; performing heat treatment on the bonded intermediate product to peel off the thin film of the piezoelectric single crystal wafer; and producing a top electrode on the peeled side of the piezoelectric single crystal wafer. The preparation method for the cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer set forth in the present invention does not require the growth of a sacrificial layer, and does not perform etching and hole-forming on the thin film; the mechanical strength of the device is increased, and the thin film is not easily damaged; the cavity structure is formed before film forming, yield is high, and residue from etching is not left after film forming, there being no need to consider the effect of incomplete release on the device.
Inventors:
SHUAI YAO (CN)
WU CHUANGUI (CN)
LUO WENBO (CN)
WU CHUANGUI (CN)
LUO WENBO (CN)
Application Number:
PCT/CN2019/118090
Publication Date:
September 17, 2020
Filing Date:
November 13, 2019
Export Citation:
Assignee:
UNIV ELECTRONIC SCI & TECH CHINA (CN)
International Classes:
H03H3/02
Foreign References:
| CN109981070A | 2019-07-05 | |||
| CN104767500A | 2015-07-08 | |||
| CN109309483A | 2019-02-05 | |||
| CN109302159A | 2019-02-01 | |||
| US20020189062A1 | 2002-12-19 |
Attorney, Agent or Firm:
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY CENTER OF PATENT (CN)
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