Title:
CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CARBIDE MOSFET DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/088231
Kind Code:
A1
Abstract:
A cellular structure (200) of a silicon carbide MOSFET device, and a silicon carbide MOSFET device. The cellular structure (200) of the silicon carbide MOSFET device comprises: second conductive well regions (203) located on two sides of the cellular structure (200) and arranged within the surface of a drift layer (202), first conductive source regions (204) located within the surfaces of the well regions (203), and a gate structure located at the center of the cellular structure (200) and in contact with the source regions (204), the well regions (203), and the drift layer (202). The cellular structure (200) further comprises a source metal layer (207) located above the source regions (204) and forming ohmic contact with the source regions (204); on two sides of the cellular structure (200), side trenches are formed downwardly on regions of the drift layer (202) that are not covered by the well regions (203); Schottky metal layers (208) forming Schottky contact with the drift layer (202) below the side trenches are arranged in the side trenches. By integrating an SBD in the cellular structure of the silicon carbide MOSFET device, the bipolar degradation phenomenon of silicon carbide is mitigated, the chip reliability is improved, and the purposes of reducing the module packaging cost and improving the module electrical characteristic are achieved.
Inventors:
DAI XIAOPING (CN)
WANG YAFEI (CN)
CHEN XIMING (CN)
LI CHENGZHAN (CN)
LUO HAIHUI (CN)
WANG YAFEI (CN)
CHEN XIMING (CN)
LI CHENGZHAN (CN)
LUO HAIHUI (CN)
Application Number:
PCT/CN2019/128387
Publication Date:
May 14, 2021
Filing Date:
December 25, 2019
Export Citation:
Assignee:
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06; H01L21/336; H01L29/24; H01L29/47; H01L29/78
Foreign References:
| CN106876485A | 2017-06-20 | |||
| CN109119419A | 2019-01-01 | |||
| CN107580725A | 2018-01-12 | |||
| CN108615767A | 2018-10-02 | |||
| CN109904155A | 2019-06-18 | |||
| US20170148927A1 | 2017-05-25 | |||
| US20160260831A1 | 2016-09-08 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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