Title:
CERAMIC SUBSTRATE, CERAMIC CIRCUIT SUBSTRATE, SEMICONDUCTOR DEVICE, CERAMIC SUBSTRATE MANUFACTURING METHOD, AND CERAMIC DIVIDED SUBSTRATE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/243667
Kind Code:
A1
Abstract:
A ceramic substrate according to the embodiments is characterized by having two or more peaks in the 98-106 eV range in a spectrum obtained by measuring a laser irradiation region of a laser machining surface via XPS. Also provided are a ceramic circuit substrate and a semiconductor device comprising the ceramic substrate, and manufacturing methods for the ceramic circuit substrate and a ceramic divided substrate.
Inventors:
MATSUMOTO YUKIHISA (JP)
Application Number:
PCT/JP2023/022115
Publication Date:
December 21, 2023
Filing Date:
June 14, 2023
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
H01L23/13; H01L23/12; H01L23/15; H05K1/02; H05K1/03; H05K3/00
Domestic Patent References:
| WO2020189526A1 | 2020-09-24 | |||
| WO2016174970A1 | 2016-11-03 |
Foreign References:
| JP2013175667A | 2013-09-05 | |||
| JP2003293153A | 2003-10-15 |
Attorney, Agent or Firm:
TOKYO INTERNATIONAL PATENT FIRM (JP)
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