CHARGED PARTICLE BEAM DEVICE

WIPO Patent Application WO/2019/058441

A1

In order to extract crystal defects on a sample with a mirror electron microscope at high speed, this charged particle beam device is provided with a charged particle source, a first power source which applies a first voltage to a charged particle source, a second power source which applies a second voltage to a sample, an imaging optical system which images charged particles incident from the direction of the sample, a detector which is arranged in the imaging optical system and detects charged particles, and an image processing device which processes the image formed on the basis of the detected charged particles, wherein the imaging optical system performs imaging under an overfocus condition, under which mirror electrons that are bounced back by an electrical field formed on the sample by the potential difference between the first and the second voltage are not imaged (S700). The image processing device extracts pixels having a brightness less than or equal to a threshold value (S701); for each of the extracted pixels, defines a set of adjacent pixels as a pixel mass (S702); and identifies as defects those pixel masses in which the number of pixels is greater than or equal to a specified value (S703).

OGATA TOMOHIKO (JP)
HACHIMORI TATSUYA (JP)
HASEGAWA MASAKI (JP)
MURAKOSHI HISAYA (JP)
KANEOKA NORIYUKI (JP)
ONUKI KATSUNORI (JP)

PCT/JP2017/033857

March 28, 2019

September 20, 2017

Click for automatic bibliography generation  

HITACHI HIGH TECH CORP (JP)

G01N23/203; G01N23/225

WO2016002003A1	2016-01-07
WO2016152582A1	2016-09-29

JP2013029386A	2013-02-07
US6812461B1	2004-11-02

POLAIRE I.P.C. (JP)

View/Download PDF      PDF Help

Previous Patent: CHARGED PARTICLE BEAM DEVICE

Next Patent: DISPLAY DEVICE AND METHOD FOR DRIVING DISPLAY DEVICE