Title:
CHEMICAL VAPOR DEPOSITION DEVICE AND METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/124270
Kind Code:
A1
Abstract:
Disclosed in the present invention are a chemical vapor deposition device and a method therefor. The chemical vapor deposition device comprises: a reaction chamber, which is provided with a gas inlet and an gas outlet, a tray being arranged in the reaction chamber and used for holding a substrate; an outer shell, which is arranged outside the reaction chamber, an accommodating space being formed between the inner wall of the outer shell and the outer wall of the reaction chamber; a plurality of radiation heat sources, which are arranged in the accommodating space and are used for heating a substrate through the outer wall of the reaction chamber; and a gas pressure adjustment device, which is used for independently adjusting the gas pressure in the accommodating space and the reaction chamber. The device has the advantages: the gas pressure in the accommodating space is lower than atmospheric pressure, which helps to decrease the borne pressure of a cavity wall of the reaction chamber without impacting the heat transfer efficiency of the radiation heat sources, thereby ensuring the heating uniformity of a reaction area in the reaction chamber, ensuring the uniformity of deposition of a substrate thin film and increasing the production yield of substrates.
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Inventors:
YIN GERALD ZHEYAO (CN)
ZHANG HAILONG (CN)
PANG YUNLING (CN)
CONG HAI (CN)
ZHANG HAILONG (CN)
PANG YUNLING (CN)
CONG HAI (CN)
Application Number:
PCT/CN2022/119603
Publication Date:
July 06, 2023
Filing Date:
September 19, 2022
Export Citation:
Assignee:
ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA (CN)
International Classes:
C23C16/52; C23C16/44
Foreign References:
| JP2881217B2 | 1999-04-12 | |||
| CN212102999U | 2020-12-08 | |||
| US20090277386A1 | 2009-11-12 |
Attorney, Agent or Firm:
SUNSHINEIP INTELLECTUAL PROPERTY LAW FIRM (CN)
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