Title:
CLEANING COMPOSITION AND SEMICONDUCTOR SUBSTRATE CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/176708
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a cleaning composition and a semiconductor substrate cleaning method, which are excellent at preventing the surface of a metal part in a substrate from being roughened, excellent at removing organic residue, and also excellent at removing inorganic residue. The cleaning composition of the present invention is used to clean a substrate that has been subjected to chemical mechanical polishing treatment, the cleaning composition including an amine compound, a corrosion inhibitor, an organic solvent, and water. The amine compound includes at least one compound X selected from the group consisting of tertiary amine compounds with a conjugate acid having a pKa of 8.0 or more, and quaternary ammonium salt compounds including a quaternary ammonium cation having 5 or more carbon atoms in total.
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2023/009216
Publication Date:
September 21, 2023
Filing Date:
March 10, 2023
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; C11D7/32; C11D7/50
Domestic Patent References:
| WO2021230063A1 | 2021-11-18 | |||
| WO2021005980A1 | 2021-01-14 | |||
| WO2021131449A1 | 2021-07-01 |
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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