CMP POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE

Title:

CMP POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2006/009160

Kind Code:

A1

Abstract:

Disclosed is a CMP polishing agent containing cerium oxide particles, a dispersing agent, a water-soluble polymer and water wherein the water-soluble polymer is composed of a polymer which is obtained by polymerizing a monomer containing at least either of a carboxylic acid having an unsaturated double bond and a salt thereof while using at least either of a cationic azo compound and a salt thereof as a polymerization initiator. Such a polishing agent enables to perform polishing efficiently and uniformly at high speed without producing scratches in CMP processes for planarization of interlayer insulating films, BPSG films and insulating films for shallow trench isolation. In addition, this polishing agent makes the process control for polishing easier. Also disclosed is a polishing method.

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Inventors:

FUKASAWA MASATO
KOYAMA NAOYUKI
KURATA YASUSHI
HAGA KOUJI
AKUTSU TOSHIAKI
OOTSUKI YUUTO

Application Number:

PCT/JP2005/013283

Publication Date:

January 26, 2006

Filing Date:

July 20, 2005

Export Citation:

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Assignee:

HITACHI CHEMICAL CO LTD (JP)
FUKASAWA MASATO
KOYAMA NAOYUKI
KURATA YASUSHI
HAGA KOUJI
AKUTSU TOSHIAKI
OOTSUKI YUUTO

International Classes:

H01L21/304; B24B37/00; C09K3/14

Foreign References:

JP2000315667A	2000-11-14
JP2000323444A	2000-11-24
JP2003303791A	2003-10-24
JP2003303792A	2003-10-24

Other References: