Title:
COMPONENT TO BE USED FOR PLASMA PROCESSING DEVICE, METHOD FOR MANUFACTURING COMPONENT TO BE USED FOR PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/053395
Kind Code:
A1
Abstract:
Provided is a technique for reducing electrical resistance and suppressing generation of particles in a component to be used for a plasma processing device. The component to be used for the plasma processing device comprises: a conductive substrate; a plurality of conductive projections projecting from the surface of the conductive substrate and electrically connected to each other via the conductive substrate; and a Si-containing coating layer formed on the surface of the conductive substrate and the surfaces of the conductive projections so as to partially expose each of the conductive projections.
Inventors:
SEGUCHI TAISEI (JP)
ITO KOEI (JP)
ITO KOEI (JP)
Application Number:
PCT/JP2023/030266
Publication Date:
March 14, 2024
Filing Date:
August 23, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/31; C23C16/30
Foreign References:
| JP2008016795A | 2008-01-24 | |||
| JP2007335831A | 2007-12-27 | |||
| JP2011511475A | 2011-04-07 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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