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Patent Searching and Data


Title:
SENSOR DEVICE CAPABLE OF MEASURING ELECTRIC FIELD INTENSITY AND METHOD FOR MEASURING ELECTRIC FIELD INTENSITY
Document Type and Number:
WIPO Patent Application WO/2024/053396
Kind Code:
A1
Abstract:
Provided is a sensor device that measures an external electric field with high measurement sensitivity. This sensor device is capable of measuring the electric field intensity of an external electric field. The sensor device comprises: a first dielectric layer; a channel layer disposed directly on the first dielectric layer, having a channel region, and having an atomic layer material film of one or more atomic layers formed using a two-dimensional transition metal dichalcogenide; and first and second electrodes that are in electrical contact with the channel layer and are opposed to each other with the channel region therebetween. The channel layer has first and second surfaces. The first surface is located on the first dielectric layer. The second surface is exposed to the outside or has a second dielectric layer disposed thereon. The Fermi level of the channel layer is located in a conduction band or a valence band of the channel layer, and is located in a trap level band of the first dielectric layer at an interface between the first dielectric layer and the channel layer.

Inventors:
KNAREEKUNNAN AFSAL (JP)
MIZUTA HIROSHI (JP)
MURUGANATHAN MANOHARAN (JP)
KUDO TAKESHI (JP)
MARUYAMA TAKESHI (JP)
Application Number:
PCT/JP2023/030296
Publication Date:
March 14, 2024
Filing Date:
August 23, 2023
Export Citation:
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Assignee:
OTOWA ELECTRIC CO LTD (JP)
International Classes:
G01R29/08; H01L21/28; H01L29/423; H01L29/49; H01L29/786
Foreign References:
JP2022073270A2022-05-17
JP2022075715A2022-05-18
JP2017010971A2017-01-12
JP2019054119A2019-04-04
JP2016127267A2016-07-11
JP2015160794A2015-09-07
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
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