Title:
COMPOSITION FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2022/172862
Kind Code:
A1
Abstract:
The present invention provides a composition for cleaning a semiconductor substrate, the composition having a high tungsten oxide removal rate, while having Ti/W etching selectivity. A composition for cleaning a semiconductor substrate, the composition containing (A) an oxidant, (B) a fluorine compound, (C) a tungsten metal corrosion inhibitor and (D) a tungsten oxide etching accelerator, wherein: the addition ratio of the oxidant (A) is 0.0001% to 10% by mass relative to the total mass of the composition for cleaning a semiconductor substrate; the addition ratio of the fluorine compound (B) is 0.005% to 10% by mass relative to the total mass of the composition for cleaning a semiconductor substrate; and the addition ratio of the tungsten metal corrosion inhibitor (C) is 0.0001% to 5% by mass relative to the total mass of the composition for cleaning a semiconductor substrate.
Inventors:
OIE TOSHIYUKI (TW)
ADANIYA TOMOYUKI (JP)
ADANIYA TOMOYUKI (JP)
Application Number:
PCT/JP2022/004347
Publication Date:
August 18, 2022
Filing Date:
February 04, 2022
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C11D7/08; C11D7/10; C11D7/18; C11D7/32; C11D7/34; C11D7/36; H01L21/304; H01L21/306; H01L21/308; H01L21/3205; H01L21/3213; H01L21/768; H01L23/522
Domestic Patent References:
| WO2015111684A1 | 2015-07-30 |
Foreign References:
| JP2009021516A | 2009-01-29 | |||
| JP2014093407A | 2014-05-19 | |||
| JP2009019255A | 2009-01-29 | |||
| JP2015506583A | 2015-03-02 |
Attorney, Agent or Firm:
KOBAYASHI Hiroshi et al. (JP)
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