COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINTING

WIPO Patent Application WO/2021/125036

A1

Provided is a composition for forming a resist underlayer film for nanoimprinting, said composition demonstrating good planarizability and particularly high hydrophobicity even during high-temperature firing, as well as being able to be adjusted, by changing the molecular framework thereof, to an optical constant or etching speed that is suitable for a process. This composition for forming a resist underlayer film for nanoimprinting includes a novolac resin that has a repeating unit structure represented by formula (1). [In formula (1), group A represents an organic group having an aromatic ring, a condensed aromatic ring, or a condensed aromatic heterocycle, group B represents an organic group having an aromatic ring or a condensed aromatic ring, group E represents a single bond or a branched or straight-chain C1-10 alkylene group that may be substituted and may include an ether bond and/or a carbonyl group, group D represents an organic group that has 1 to 15 carbon atoms and is represented by formula (2) (in which R1, R2, and R3 each independently represent a fluorine atom, or a straight-chain, branched-chain, or cyclic alkyl group, and any two of R1, R2, and R3 may be bonded to one another to form a ring), and n represents a number from 1 to 5.]

TOKUNAGA HIKARU (JP)
NAKAJIMA MAKOTO (JP)

PCT/JP2020/046020

June 24, 2021

December 10, 2020

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NISSAN CHEMICAL CORP (JP)

C08G4/00; B29C59/02; C08G12/26; H01L21/027

WO2018043410A1	2018-03-08
WO2014208542A1	2014-12-31
WO2019172156A1	2019-09-12

JP2016060886A	2016-04-25
JP2013035243A	2013-02-21

TSUKUNI & ASSOCIATES et al. (JP)

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