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Patent Searching and Data


Title:
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM COMPRISING DIOL STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/251482
Kind Code:
A1
Abstract:
The present invention provides: a composition for forming a resist underlayer film, said composition being capable of filling micropores on a miniaturized semiconductor substrate without leaving voids (empty spaces), while being suppressed in the generation of a sublimate during baking of a film in the process for forming the film; and a chemical-resistant protective film composition which also functions as a protective film with respect to a wet etching chemical for semiconductor substrate processing. A composition for forming a resist underlayer film or a composition for forming a protective film, said composition containing an organic solvent and a compound that is represented by formula (1), while having a theoretical molecular weight of 999 or less. (In formula (1), Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group represented by formula (2); and p represents an integer from 2 to 4.) (In formula (2), R1 represents an alkylene group having from 1 to 4 carbon atoms; each of A1 to A3 independently represents a hydrogen atom, a methyl group or an ethyl group: X represents -COO-, -OCO-, -O-, -S- or -NRa-; Ra represents a hydrogen atom or a methyl group; Y represents a direct bond or an optionally substituted alkylene group having from 1 to 4 carbon atoms; each of R2, R3 and R4 represents a hydrogen atom or an optionally substituted alkyl group having from 1 to 10 carbon atoms or aryl group having from 6 to 40 carbon atoms; R5 represents a hydrogen atom or a hydroxy group; n represents an integer of 0 or 1; each of m1 and m2 independently represents an integer of 0 or 1; and * represents a binding site to Z1.)

Inventors:
KAMIBAYASHI SATOSHI (JP)
ENDO YUKI (JP)
Application Number:
PCT/JP2021/022278
Publication Date:
December 16, 2021
Filing Date:
June 11, 2021
Export Citation:
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Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08G65/34; C08F220/20; G03F7/11; G03F7/20
Domestic Patent References:
WO2019124474A12019-06-27
Foreign References:
JP2006502448A2006-01-19
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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