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Title:
DEVICE FOR PRODUCING SILICON AND METHOD FOR PRODUCING SILICON
Document Type and Number:
WIPO Patent Application WO/2012/086777
Kind Code:
A1
Abstract:
As the temperature of part of a reactor (10) in a heater (22) is set to within the deposition temperature range for silicon, silicon tetrachloride gas is supplied to the interior of the reactor from a silicon tetrachloride gas supply opening (16a), zinc gas is supplied to the interior of the reactor vessel from a zinc gas supply opening (18a), the silicon tetrachloride is reduced with the zinc in the reactor, and a silicon deposition region (S) for depositing silicon on a wall section corresponding to the region set to within the silicon deposition temperature range in the reactor is formed. Then, a peeling mechanism (24) peels the silicon deposited in the silicon deposition region by moving a rod-shaped member (24b) on the silicon deposited in the silicon deposition region.

Inventors:
NAKAHARA KATSUMASA (JP)
KONDOU MASASHI (JP)
TAKEUCHI YOSHINORI (JP)
SAKAKI DAISUKE (JP)
Application Number:
PCT/JP2011/079866
Publication Date:
June 28, 2012
Filing Date:
December 22, 2011
Export Citation:
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Assignee:
ASAHI GLASS CO LTD (JP)
KINOTECH SOLAR ENERGY CORP (JP)
NAKAHARA KATSUMASA (JP)
KONDOU MASASHI (JP)
TAKEUCHI YOSHINORI (JP)
SAKAKI DAISUKE (JP)
International Classes:
C01B33/033
Domestic Patent References:
WO2010134544A12010-11-25
WO2009142538A12009-11-26
Foreign References:
JPS63256720A1988-10-24
JPH09142847A1997-06-03
JP2007145663A2007-06-14
JP2010042934A2010-02-25
JP2009248043A2009-10-29
Attorney, Agent or Firm:
KAWAMOTO, Manabu et al. (JP)
Manabu Kawamoto (JP)
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