Title:
DIELECTRIC MATERIALS TO PREVENT PHOTORESIST POISONING
Document Type and Number:
WIPO Patent Application WO2004104698
Kind Code:
A3
Abstract:
Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.
Inventors:
NGUYEN SON VAN
ARMACOST MICHAEL D (US)
NAIK MEHUL (US)
DIXIT GIRISH A (US)
YIEH ELLIE Y (US)
ARMACOST MICHAEL D (US)
NAIK MEHUL (US)
DIXIT GIRISH A (US)
YIEH ELLIE Y (US)
Application Number:
PCT/US2004/015531
Publication Date:
April 14, 2005
Filing Date:
May 18, 2004
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
NGUYEN SON VAN
ARMACOST MICHAEL D (US)
NAIK MEHUL (US)
DIXIT GIRISH A (US)
YIEH ELLIE Y (US)
NGUYEN SON VAN
ARMACOST MICHAEL D (US)
NAIK MEHUL (US)
DIXIT GIRISH A (US)
YIEH ELLIE Y (US)
International Classes:
G03F7/09; G03F7/11; H01L21/027; H01L21/311; H01L21/316; H01L21/768; G03F; (IPC1-7): H01L21/316; H01L21/027
Foreign References:
| US6506497B1 | 2003-01-14 | |||
| US6209484B1 | 2001-04-03 |
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