Title:
DIELECTRIC THIN FILM, CAPACITIVE ELEMENT AND ELECTRONIC CIRCUIT SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/045447
Kind Code:
A1
Abstract:
[Problem] The purpose of the present invention is to provide a capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B-O-N oxynitride. When the A-B-O-N oxynitride is represented by the compositional formula AaBbOoNn, (o + n)/a < 3.00 is satisfied.
Inventors:
YAMAZAKI KUMIKO (JP)
SATO WAKIKO (JP)
YAMAZAKI JUNICHI (JP)
SATO WAKIKO (JP)
YAMAZAKI JUNICHI (JP)
Application Number:
PCT/JP2019/033545
Publication Date:
March 05, 2020
Filing Date:
August 27, 2019
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01G4/33; C04B35/58; C23C14/08; H01B3/12; H01G4/30; H01L21/316; H01L21/822; H01L27/04
Domestic Patent References:
| WO2017135298A1 | 2017-08-10 | |||
| WO2017135296A1 | 2017-08-10 | |||
| WO2017135294A1 | 2017-08-10 |
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
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