DISPLAY DEVICE AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2020/116107

A1

The purpose of the present invention is to provide a technology which enables reduction of the film thickness of a conductive layer that is used for the purpose of protecting a source region and a drain region of an oxide semiconductor. A semiconductor device according to the present invention comprises: a substrate; a first semiconductor layer of a polycrystalline silicon, which is provided above the substrate; a second semiconductor layer of an oxide semiconductor, which is provided above the first semiconductor layer; a conductive layer which covers the top of the edge of the second semiconductor layer, while being connected to the second semiconductor layer; a first contact hole which is provided so as to expose a part of the upper surface of the first semiconductor layer; a second contact hole which is provided so as to expose a part of the upper surface of the conductive layer; and an electrode wiring line which is provided in the first contact hole and the second contact hole. The conductive layer comprises: a first conductive film which is connected to the second semiconductor layer; and a second conductive film which is provided on or above the first conductive film. The second conductive film has resistance to a cleaning liquid that is used for cleaning within the first contact hole and the second contact hole.

HANADA AKIHIRO (JP)
JINNAI TOSHIHIDE (JP)
WATAKABE HAJIME (JP)
ONODERA RYO (JP)

PCT/JP2019/044482

June 11, 2020

November 13, 2019

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JAPAN DISPLAY INC (JP)

H01L21/28; G02F1/1368; H01L29/786

WO2017130776A1

2017-08-03

JP2018049919A	2018-03-29
CN103996618A	2014-08-20
JP2001176961A	2001-06-29
JP2018074076A	2018-05-10

POLAIRE I.P.C. (JP)

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